Spin relaxation mechanism of hopping transport in a 2D asymmetric quantum dot array

被引:1
作者
Zinov'eva, A. F. [1 ]
Nenashev, A. V. [1 ]
Dvurechenskii, A. V. [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
基金
俄罗斯基础研究基金会;
关键词
GERMANIUM;
D O I
10.1134/S1063776107080110
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Spin relaxation is studied in the hopping conduction mode in 2D arrays of quantum dots (QDs) with structural asymmetry. It is shown that the absence of the "up-down" symmetry in a QD leads to the emergence of a new spin relaxation mechanism in tunneling in a 2D QD array. The difference in spin relaxation mechanisms for symmetric and asymmetric QDs is demonstrated on the basis of theoretical analysis of an elementary event (jump between two tunnel-coupled dots). It is shown that spin flip during tunneling between QDs is the main spin relaxation mechanism in the transport in dense arrays of QDs in Ge placed in weak (1-10 T) magnetic fields.
引用
收藏
页码:388 / 396
页数:9
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