Improvement in electrical performance of Schottky contacts for high-voltage diode

被引：5

作者：

Nakamura, T ^{[1
]}

Miyanagi, T ^{[1
]}

Tsuchida, H ^{[1
]}

Kamata, I ^{[1
]}

Jikimoto, T ^{[1
]}

Izumi, K ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

Schottky barrier diode; Mo contact; high-voltage; low-loss;

D O I：

10.4028/www.scientific.net/MSF.483-485.721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effect of high temperature annealing on the Schottky barrier height (Phi(b)) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Phi(b) increased and the leakage current decreased by annealing at 6000C, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 6000C showed a blocking-voltage (V-b) of 4.15 kV and a specific on resistance (R-on) of 9.07 m Omega cm(2), achieving a high V-b(2)/R-on value of 1898 MW/cm(2).

引用

页码：721 / 724

页数：4

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