Electro-optical Characterization of Superconducting Nanowire Single-Photon Detectors Fabricated on 3C Silicon Carbide

被引：3

作者：

Martini, F. ^{[1
]}

Gaggero, A. ^{[1
]}

Mattioli, F. ^{[1
]}

Leoni, R. ^{[1
]}

机构：

[1] CNR, Ist Foton & Nanotecnol, Via Cineto Romano 42, I-00156 Rome, Italy

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2020年 / 199卷 / 1-2期

基金：

欧盟地平线“2020”;

关键词：

SNSPD; SiC; Quantum photonics; SPINS;

D O I：

10.1007/s10909-019-02260-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon carbide (SiC) is a promising candidate as a material platform for photonic quantum technologies due to the coexistence of quantum emitters and a non-centrosymmetric crystal structure. The realization of a single-photon detector was hampered from both the poor surface quality and the difficulties in micromachining this material. In this work, we realized superconducting nanowire single-photon detectors (SNSPDs) integrated on top of high-quality 3C SiC whose electro-optical characterization was performed thanks to a novel alignment method. We demonstrate that SNSPDs with high internal efficiency can be fabricated which is a fundamental building block toward the realization of complex architectures in this platform.

引用

页码：563 / 568

页数：6

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