Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

被引：0

作者：

Wu, Jianzhi ^{[1
]}

Lu, Wei ^{[1
]}

Yu, Paul K. L. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年

关键词：

GaN-on-Si; HEMT; Gate recess; Normally off; Dry etching; Wet etching; PERFORMANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents results of normally-off AlGaN/GaN MOS-HEMTs fabricated with a two-step gate recess technique which includes a chloride based Inductively Coupled Plasma (ICP) etch followed by HCl and NH4OH surface treatment. The latter can effectively smoothen evenly the ICP etched surface. The two-step gate recessed device with atomic layer deposited (ALD) Al2O3 as gate dielectric delivers a threshold voltage (V-th) of +1V and a maximum current density per gate width (I-max) of up to 0.583 A/mm which is 90% that of an un-recessed gate depletion-mode AlGaN/GaN HEMT device (V-th of -3.5V) fabricated from the same epitaxial wafer.

引用

页码：594 / 596

页数：3

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