Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy

被引:11
作者
Sharma, TK
Arora, BM
Gokhale, MR
Rajgopalan, S
机构
[1] Ctr Adv Technol, Laser Phys Div, Semicond Laser Sect, Indore 452013, India
[2] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
[3] Indira Gandhi Ctr Atom Res, Kalpakkam 603102, Tamil Nadu, India
关键词
MOVPE; switching sequence; InGaP/GaAs; interfacial layer; PL; SIMS; HRXRD;
D O I
10.1016/S0022-0248(00)00753-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In GaAs/InGaP/GaAs structures grown by metal organic vapor-phase epitaxy (MOVPE), the two heterointerfaces are not identical. Normal photoluminescence (PL) features corresponding to the band gaps of GaAs and InGaP are seen for InGaP layer grown on GaAs, However, an intense long-wavelength feature is observed if we grow GaAs on InGaP (inverted structure) while the features of InGaP and GaAs are suppressed. The nature of interfacial regions is investigated by using different gas switching sequences, which can influence the interfacial region composition. Significantly, we find anomalous PL features similar to those observed in the case of inverted structure if we briefly interrupt the growth of InGaP on GaAs and introduce AsH3 during the growth interruption. Secondary-ion mass spectrometry (SIMS) measurements and preliminary results of the compositional analysis of the interfacial layers based on high resolution X-ray diffraction (HRXRD) and PL measurements suggest that a deleterious effect arises with the exposure of InGaP surface to AsH3 and is attributed to the formation of an interfacial InGaAsP layer, (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:509 / 514
页数:6
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