General accuracy considerations of microwave on-wafer silicon device measurements

被引：0
|
作者：
Kolding, TE [1 ]
机构：
[1] Aalborg Univ, RF Integrated Syst & Circuits RISC Grp, Aalborg, Denmark
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper gives a general treatment of problems encountered when conducting microwave on-wafer measurements on devices fabricated on silicon substrates. First, issues specific to low-resistivity substrates and low-conductance metallization are detailed. This treatment includes probing reliability, contact resistance, leakage effects, and substrate coupling. Next, some widely disputed subjects of on-wafer measurements are assessed and novel techniques for verifying measuring accuracy are proposed.
引用
收藏
页码：1839 / 1842
页数：4
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