Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers

被引：15

作者：

Hu, Zhe ^{[1
]}

Zhou, Daxiang ^{[1
]}

Xu, Ling ^{[1
]}

Wu, Qi ^{[1
]}

Xie, Haiting ^{[1
]}

Dong, Chengyuan ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Elect Engn, Natl Engn Lab TFT LCD Mat & Technol, Shanghai 200240, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2015年 / 104卷

基金：

中国国家自然科学基金;

关键词：

Amorphous indium gallium zinc oxide (a-IGZO); Thin film transistor (TFT); Thermal stability; Passivation-layer; Intrinsic excitation; ELECTRICAL-CONDUCTIVITY; OXIDE; PRESSURE;

D O I：

10.1016/j.sse.2014.10.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal stability of amorphous InGaZnO thin film transistors (a-IGZO TFTs) passivated by AlOx layers was investigated in this paper. The passivation-layer thickness (0-60 nm) and measurement temperature (298-573 K) were intentionally controlled to study the temperature dependent performance of a-IGZO TFTs with sputtered AlOx passivation-layers. Generally, there was a negative shift in threshold voltage under higher temperatures, which was due to thermally excited carriers through intrinsic excitation and oxygen vacancy formation. A qualitative model was proposed to effectively ascertain the aforementioned two physical mechanisms. With passivation-layer thickness decreasing oxygen vacancy formation became more and more evident while intrinsic excitation could apparently worsen the characteristics of a-IGZO TFTs under the temperature higher than 473 K. In addition, the "passivation-layer thickness effect" for thermal stability of a-IGZO TFTs was theoretically explained by the variation of defect formation energy with the device passivation-layer thickness. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：39 / 43

页数：5

共 21 条

[1] THE INVESTIGATION OF THE PRESSURE AND TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF THIN ZINC-OXIDE FILMS WITH HIGH RESISTANCES [J].