High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

被引：3
作者：
Fu, Ren-Da [1 ]
Chang, Che Kai [1 ]
Chuang, Ming-Yueh [2 ]
Chen, Tai-Hong [3 ]
Lu, Shao-Kai [1 ]
Liu, Day-Shan [1 ]
机构：
[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Yunlin 640, Taiwan
[2] Creating Nano Technol, Ctr Res & Dev, Tainan 700, Taiwan
[3] Ind Technol Res Inst, Addit Mfg & Laser Applicat, Tainan 700, Taiwan
来源：
COATINGS | 2020年 / 10卷 / 01期
关键词：
organosilicon/silicon oxynitride barrier structure; water vapor transmittance rate; plasma-enhanced chemical vapor deposition; tetramethylsilane; thin film encapsulation; SILICON DIOXIDE FILMS; COATINGS; OXIDE; PERMEATION; SPECTROSCOPY; DEGRADATION; SUBSTRATE; SIO2; MG;
D O I：
10.3390/coatings10010011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 degrees C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10(-5) g/m(2)/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.
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页数：16
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