High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

被引：3

作者：

Fu, Ren-Da ^{[1
]}

Chang, Che Kai ^{[1
]}

Chuang, Ming-Yueh ^{[2
]}

Chen, Tai-Hong ^{[3
]}

Lu, Shao-Kai ^{[1
]}

Liu, Day-Shan ^{[1
]}

机构：

[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Yunlin 640, Taiwan

[2] Creating Nano Technol, Ctr Res & Dev, Tainan 700, Taiwan

[3] Ind Technol Res Inst, Addit Mfg & Laser Applicat, Tainan 700, Taiwan

来源：

COATINGS | 2020年 / 10卷 / 01期

关键词：

organosilicon/silicon oxynitride barrier structure; water vapor transmittance rate; plasma-enhanced chemical vapor deposition; tetramethylsilane; thin film encapsulation; SILICON DIOXIDE FILMS; COATINGS; OXIDE; PERMEATION; SPECTROSCOPY; DEGRADATION; SUBSTRATE; SIO2; MG;

D O I：

10.3390/coatings10010011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 degrees C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10(-5) g/m(2)/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

引用

页数：16

共 50 条

[21] Nanocrystalline TiO2 thin film prepared by low-temperature plasma-enhanced chemical vapor deposition for photocatalytic applications [J].

Zhou, Ming ;

Roualdes, Stephanie ;

Zhao, Jie ;

Autes, Vincent ;

Ayral, Andre .

THIN SOLID FILMS, 2015, 589 :770-777

[22] a-SiCx:H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications [J].

Jiang, LJ ;

Chen, X ;

Wang, XH ;

Xu, LQ ;

Stubhan, F ;

Merkel, KH .

THIN SOLID FILMS, 1999, 352 (1-2) :97-101

[23] Optical, structural and composition properties of silicon nitride films deposited by reactive radio-frequency sputtering, low pressure and plasma-enhanced chemical vapor deposition [J].

Beliaev, Leonid Yu. ;

Shkondin, Evgeniy ;

Lavrinenko, Andrei V. ;

Takayama, Osamu .

THIN SOLID FILMS, 2022, 763

[24] Solid-phase crystallization of hydrogenated amorphous silicon/hydrogenated microcrystalline silicon bilayers deposited by plasma-enhanced chemical vapor deposition [J].

Park, CD ;

Kim, HY ;

Cho, MH ;

Jan, KJ ;

Lee, JY .

THIN SOLID FILMS, 2000, 359 (02) :268-274

[25] Comprehensive Investigation on the Stability of Silicon Nitride/Oxynitride as Thin-Film Encapsulation Layers Prepared by Plasma-Enhanced Chemical Vapor Deposition [J].

Li, Songju ;

Li, Min ;

Lan, Linfeng ;

Fu, Dong ;

Sun, Xianwen ;

Gao, Zhuo .

ACS APPLIED MATERIALS & INTERFACES, 2025, 17 (07) :10832-10844

[26] The preparation of organic light-emitting diode encapsulation barrier layer by low-temperature plasma-enhanced chemical vapor deposition: a study on the SiOxNy film parameter optimization [J].

Kuo, Chung-Feng Jeffrey ;

Lan, Wei-Lun ;

Chang, Yu-Cheng ;

Lin, Kun-Wei .

JOURNAL OF INTELLIGENT MANUFACTURING, 2016, 27 (03) :581-593

[27] Influence of interface structure on the bonding strength between alumina and diamondlike carbon deposited by plasma-enhanced chemical vapor deposition [J].

An, Zhengjie ;

Zhao, Junping ;

Liu, Dongliang ;

Chen, Jinchu ;

Han, Chengyan ;

Cao, Shuya .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2025, 43 (05)

[28] Neural network modeling of inter-characteristics of silicon nitride film deposited by using a plasma-enhanced chemical vapor deposition [J].

Lee, Su Jin ;

Kim, Byungwhan ;

Baik, Sung Wook .

EXPERT SYSTEMS WITH APPLICATIONS, 2011, 38 (09) :11437-11441

[29] Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition [J].

Kim, Sung-Ryong ;

Choudhury, Moinul Haque ;

Kim, Won-Ho ;

Kim, Gon-Ho .

THIN SOLID FILMS, 2010, 518 (08) :1929-1934

[30] Optical modeling of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on low-cost iron-nickel substrates for photovoltaic applications [J].

Mrazkova, Z. ;

Postava, K. ;

Torres-Rios, A. ;

Foldyna, M. ;

Roca i Cabarrocas, P. ;

Pistora, J. .

6TH NEW METHODS OF DAMAGE AND FAILURE ANALYSIS OF STRUCTURAL PARTS, 2016, 12 :130-135

← 1 2 3 4 5 →