Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates

被引：32

作者：

Yano, H. ^{[1
]}

Nakao, H. ^{[1
]}

Hatayama, T. ^{[1
]}

Uraoka, Y. ^{[1
]}

Fuyuki, T. ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama, Nara 6300192, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

基金：

日本学术振兴会;

关键词：

UMOSFET; trench; channel mobility; off-angle; on-axis;

D O I：

10.4028/www.scientific.net/MSF.556-557.807

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The achievement of high channel mobility in UMOSFETs by utilizing on-axis substrates is reported. UMOSFETs were fabricated on commercially available C-face,4H-SiC on-axis substrates. The MOS channels were formed on the single side of the trench sidewalls to be (11 (2) over bar 0), ((1) over bar(1) over bar 20), (1 (1) over bar 00), and ((1) over bar 100). By using on-axis substrates, channel mobility on ((1) over bar(1) over bar 20) was greatly improved to 66cm(2)/Vs, which is similar value (71cm(2)/Vs) on (11 (2) over bar0). These values are the highest inversion channel mobility in 4H-SiC UMOSFETs ever reported. These results suggest that the channel plane should be close to the crystal lographically accurate {11 (2) over bar0} to increase channel mobility.

引用

页码：807 / +

页数：2

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