Near-ultraviolet lateral photovoltaic effect in Fe3O4/3C-SiC Schottky junctions

被引：32

作者：

Song, Bingqian ^{[1
]}

Wang, Xianjie ^{[1
]}

Li, Bo ^{[1
]}

Zhang, Lingli ^{[1
]}

Lv, Zhe ^{[1
]}

Zhang, Yu ^{[1
]}

Wang, Yang ^{[1
,2
]}

Tang, Jinke ^{[3
]}

Xu, Ping ^{[4
]}

Li, Bingsheng ^{[1
,2
]}

Yang, Yanqiang ^{[5
]}

Sui, Yu ^{[1
]}

Song, Bo ^{[1
,2
]}

机构：

[1] Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China

[2] Harbin Inst Technol, Acad Fundamental & Interdisciplinary Sci, Harbin 150001, Peoples R China

[3] Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA

[4] Harbin Inst Technol, Sch Chem & Chem Engn, Harbin 150001, Peoples R China

[5] China Acad Engn Phys, Inst Fluid Phys, Natl Key Lab Shock Wave & Detonat Phys, Mianyang 621900, Peoples R China

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 21期

基金：

对外科技合作项目（国际科技项目）; 中国国家自然科学基金;

关键词：

METAL-OXIDE-SEMICONDUCTOR; AMORPHOUS SUPERLATTICE FILMS; SI; INTERFACE;

D O I：

10.1364/OE.24.023755

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe3O4/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm(-1) illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 mu s. The fast relaxation and high positional sensitivity of the LPE make the Fe3O4/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications. (C) 2016 Optical Society of America

引用

页码：23755 / 23764

页数：10

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