Improvement of rounding effect in chemical mechanical polishing process for nano-scale manufacturing

被引：1

作者：

Chung, MJ ^{[1
]}

机构：

[1] Korea Polytech Univ, Dept Mechatron Engn, Siheung Si 429450, Gyeonggi Do, South Korea

来源：

JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY | 2005年 / 19卷 / 11期

关键词：

rounding effect; chemical mechanical polishing; head pressure; platen and head speed; deposition depth;

D O I：

10.1007/BF02916503

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In the present work, the rounding effect in the CMP process was examined in the process conditions such as the head pressure, platen and head speed, and deposition thickness. The rounding effect according to each process condition is measured from SEM and compared with each other. From the experimental results, CMP process condition to reduce the rounding effect is determined and the rounding effect has been improved from 55nm to 29nm, which is about 47% reduction.

引用

页码：2091 / 2095

页数：5

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