Transistor critical sizing in MOBILE follower

被引：3

作者：

Quintana, JM ^{[1
]}

Avedillo, MJ ^{[1
]}

机构：

[1] Univ Sevilla, CNM, IMSE, Inst Microelect, Seville, Spain

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 10期

关键词：

D O I：

10.1049/el:20050388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analyses are presented of how the presence of the HFET transistor modifies the DC operation of a resonant tunnelling logic follower MOBILE. The difficulty of an analytical study for the resulting circuit has been overcome by resorting to simplified descriptions for both the RTD and the HFET I-V characteristics. We have obtained an analytical expression for the relation of the ratio of gate width to the gate length of the HFET below which a theoretically well designed follower does not operate correctly.

引用

页码：583 / 584

页数：2

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