Enhanced Raman scattering in multilayer structures of porous silicon

被引：15

作者：

Mamichev, D. A. ^{[1
]}

Gonchar, K. A. ^{[1
]}

Timoshenko, V. Yu. ^{[1
]}

Mussabek, G. K. ^{[2
]}

Nikulin, V. E. ^{[2
]}

Taurbaev, T. I. ^{[2
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

[2] Al Farabi Kazakh Natl Univ, Alma Ata 050000, Kazakhstan

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2011年 / 42卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

Raman scattering; nanostructures; porous silicon; sensors; photonic band-gap structures; PHOTONIC BAND-GAP; GENERATION;

D O I：

10.1002/jrs.2865

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Multiple enhancement of the Raman scattering efficiency is observed in porous-silicon-based one-dimensional photonic bandgap (PBG) structures with tunable reflection and dispersion under excitation at 1.06 mu m. The experimental results are explained as being due to the resonant increase in the effective Raman susceptibility at light wavelengths close to the PBG edges. This effect is discussed in view of possible applications in the Raman spectroscopy of molecules embedded in porous media as well as in the Raman laser based on silicon. Copyright (C) 2011 John Wiley & Sons, Ltd.

引用

页码：1392 / 1395

页数：4

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