Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond

被引：11

作者：

Paterson, G. W. ^{[1
]}

Holland, M. C. ^{[2
]}

Bentley, S. J. ^{[2
]}

Thayne, I. G. ^{[2
]}

Long, A. R. ^{[1
]}

机构：

[1] Univ Glasgow, SUPA, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[2] Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTRICAL-PROPERTIES; ARSENIDE;

D O I：

10.1063/1.3599895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of n(+) GaAs and In0.53Ga0.47As MOS capacitors with a dielectric stack of Ga2O3/Gd0.25Ga0.15O0.6 have been examined in detail and compared to the interface state model. The deviations from the model are assessed and the limitations of different interface state density extraction techniques are highlighted. The results of a model which accounts for many of the electrical characteristics of the InGaAs material by including states within the oxide and at the interface are reported. A hypothesis that may explain the difference between the GaAs and InGaAs characteristics and the similarities between the properties of many different oxides on InGaAs is discussed, leading to suggestions on how the oxide quality may be improved. (C) 2011 American Institute of Physics. [doi.10.1063/1.3599895]

引用

页数：10

共 46 条

[1] Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics
Paterson, G. W.
Bentley, S. J.
Holland, M. C.
Thayne, I. G.
Long, A. R.
JOURNAL OF APPLIED PHYSICS, 2011, 110 (05)
[2] On the interface state density at In0.53Ga0.47As/oxide interfaces
Brammertz, G.
Lin, H-C.
Caymax, M.
Meuris, M.
Heyns, M.
Passlack, M.
APPLIED PHYSICS LETTERS, 2009, 95 (20)
[3] Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures
Paterson, G. W.
Longo, P.
Wilson, J. A.
Craven, A. J.
Long, A. R.
Thayne, I. G.
Passlack, M.
Droopad, R.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
[4] Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels
Hwang, Yoontae
Wistey, Mark A.
Cagnon, Joel
Engel-Herbert, Roman
Stemmer, Susanne
APPLIED PHYSICS LETTERS, 2009, 94 (12)
[5] Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As
Paterson, G. W.
Holland, M. C.
Thayne, I. G.
Long, A. R.
JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
[6] The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface
Aksenov, M. S.
Valisheva, N. A.
Kovchavtsev, A. P.
TECHNICAL PHYSICS LETTERS, 2021, 47 (06) : 478 - 481
[7] The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface
M. S. Aksenov
N. A. Valisheva
A. P. Kovchavtsev
Technical Physics Letters, 2021, 47 : 478 - 481
[8] Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors
Monaghan, Scott
O'Connor, Eamon
Povey, Ian M.
Sheehan, Brendan J.
Cherkaoui, Karim
Hutchinson, Barry J. A.
Hurley, Paul K.
Ferdousi, Fahmida
Rios, Rafael
Kuhn, Kelin J.
Rahman, Anisur
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (01):
[9] Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric
O'Connor, E.
Djara, V.
Monaghan, S.
Hurley, P. K.
Cherkaoui, K.
DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3, 2011, 35 (03): : 415 - 430
[10] Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Hwang, Yoontae
Chobpattana, Varistha
Zhang, Jack Y.
LeBeau, James M.
Engel-Herbert, Roman
Stemmer, Susanne
APPLIED PHYSICS LETTERS, 2011, 98 (14)

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