共 50 条
[42]
Deposition of SiO2 and SiO2:Ge films for optical applications in a matrix distributed electron cyclotron resonance reactor
[J].
ADVANCED MATERIALS FORUM II,
2004, 455-456
:25-29
[44]
DEVICE QUALITY SIO2 DEPOSITED BY DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION WITHOUT SUBSTRATE HEATING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1992, 31 (10A)
:L1404-L1407
[45]
ELECTRON-CYCLOTRON-RESONANCE SPUTTER REMOVAL OF SIO2 ON SILICON-WAFERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1993, 11 (06)
:2067-2070
[46]
Low-temperature epitaxial Si absorber layers grown by electron-cyclotron resonance chemical vapor deposition
[J].
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C,
2003,
:1237-1240
[49]
Growth of zincblende GaN films by electron cyclotron resonance plasma enhanced chemical vapor deposition
[J].
SILICON CARBIDE AND RELATED MATERIALS 1995,
1996, 142
:871-874
[50]
Microcrystalline SiC films grown by electron cyclotron resonance chemical vapor deposition at low temperatures
[J].
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers,
1995, 34 (10)
:5527-5532