Studies on low temperature silicon grain growth on SiO2 by electron cyclotron resonance chemical vapor deposition

被引：0
|
作者：
Wang, KC
Hwang, HL
Loferski, JJ
Yew, TR
机构：
[1] NATL TSING HUA UNIV, DEPT ELECT ENGN, HSINCHU, TAIWAN
[2] NATL TSING HUA UNIV, CTR MAT SCI, HSINCHU, TAIWAN
来源：
APPLIED SURFACE SCIENCE | 1996年 / 104卷
关键词：
D O I：
10.1016/S0169-4332(96)00174-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electron cyclotron resonance chemical vapor deposition has resulted in poly-Si films with grains of one micron dimension by using the hydrogen dilution method. The crystalline fraction of the poly-Si film is almost 100% as determined from analysis of Raman spectra. The poly-Si films have preferred [111] and [110] orientations according to their XRD spectra. The hydrogen content of the poly-Si films is less than 0.8%. A simple model of grain formation is proposed to explain grain growth in the electron cyclotron resonance chemical vapor deposition deposited poly-Si films.
引用
收藏
页码：373 / 378
页数：6
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