Modeling and Simulation of Triple Junction Solar Cells

被引:1
作者
Arbez, Gilbert [1 ]
Wheeldon, Jeffrey [1 ]
Walker, Alexandre [1 ]
Hinzer, Karin [1 ]
Schriemer, Henry [1 ]
机构
[1] Univ Ottawa, Ctr Res Photon, Ottawa, ON K1N 6N5, Canada
来源
PHOTONICS NORTH 2010 | 2010年 / 7750卷
关键词
solar cell; dilute nitride; conceptual model; simulation model; physical model; parameter model; BAND PARAMETERS;
D O I
10.1117/12.876131
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
Multi-junction solar cells are devices composed of many layers of diverse materials with varying physical properties. Understanding the operation and design of such devices is challenging because of this diversity. To support these efforts, the computer modeling and simulation study is an essential tool. The principles of two main steps in a study, conceptual modeling and simulation modeling, are presented to show their importance in dealing with many materials and their properties. Conceptual modeling deals with establishing physical mathematical models representing the physics of material behaviour. The physical models have parameters whose values are dependent on the material; often parameter models are required to establish the parameter values. Simulation models are the representation of these conceptual models within software. Examining the Sentaurus software products shows that many conceptual models are integrated within the software; proper selection of physical models must be made and parameters defined for the materials used in the device being studied. When considering new materials for improving solar cell design, typically only parameters are set for existing physical models, but it is sometimes necessary to revise the models and modify such software. Band gap modeling of dilute nitrides, in particular InGaAsN demonstrates the importance of considering conceptual modeling and how software must be capable of adapting new simulation physical and parameter models.
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页数:10
相关论文
共 17 条
  • [1] [Anonymous], 2008, SYNOPSIS
  • [2] [Anonymous], HDB SIMULATION
  • [3] BANK RE, 1983, IEEE T ELECTRON DEV, V30, P1031, DOI 10.1109/T-ED.1983.21257
  • [4] Electrical measurement of electron and hole mobilities as a function of injection level in silicon
    Bellone, S
    Persiano, GV
    Strollo, AGM
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1459 - 1465
  • [5] Birta Louis G., 2007, MODELLING SIMULATION
  • [6] Dybvig R. Kent, 1996, SCHEME PROGRAMMING L
  • [7] Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
    Jackrel, David B.
    Bank, Seth R.
    Yuen, Homan B.
    Wistey, Mark A.
    Harris, James S., Jr.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
  • [8] Levinshtein M., 1996, Handbook series on semiconductor parameters, V1
  • [9] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON
    MASETTI, G
    SEVERI, M
    SOLMI, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 764 - 769
  • [10] The development of high efficiency multijunction photovoltaic devices using a novel modeling technique
    Michael, Sherif
    [J]. IEEE MWSCAS'06: PROCEEDINGS OF THE 2006 49TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL II, 2006, : 55 - 58