Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

被引：133

作者：

Clark, Trevor E. ^{[1
,2
]}

Nimmatoori, Pramod ^{[1
,2
]}

Lew, Kok-Keong ^{[1
,2
]}

Pan, Ling ^{[1
,2
]}

Redwing, Joan M. ^{[1
,2
]}

Dickey, Elizabeth C. ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 04期

关键词：

D O I：

10.1021/nl072849k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si1-xGex axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via US growth.

引用

页码：1246 / 1252

页数：7

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