CMOS technology - Year 2010 and beyond

被引:109
作者
Iwai, H [1 ]
机构
[1] Toshiba Co Ltd, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan
关键词
CMOS; downsizing; future; large-scale integrated circuit; limitation; technology;
D O I
10.1109/4.748187
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
MOS large-scale-integration circuits (LSI's), having advanced remarkably during the past 25 years, are expected to continue to progress well into the next century. The progress has been driven by the downsizing of the components in an LSI, such as MOSFET's, However, even before the downsizing of MOSFET's reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSI's is going to shift to 0.1 and sub-0.1 mu m. In this paper, the anticipated difficulties and some concepts for 0.1- and sub-0.1-mu m LSI's are explained based on the research of the downsizing MOSFET into such a dimension, and a further concept for deep sub-0.1-mu m LSI's is described.
引用
收藏
页码:357 / 366
页数:10
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