Ultrafast Self-Limited Growth of Strictly Monolayer WSe2 Crystals

被引:61
|
作者
Liu, Jinxin [1 ]
Zeng, Mengqi [1 ]
Wang, Lingxiang [1 ]
Chen, Yongting [1 ]
Xing, Zhuo [2 ]
Zhang, Tao [1 ]
Liu, Zheng [1 ]
Zuo, Junlai [1 ]
Nan, Fan [2 ]
Mendes, Rafael G. [3 ]
Chen, Shengli [1 ]
Ren, Feng [2 ]
Wang, Ququan [2 ]
Rummeli, Mark H. [3 ]
Fu, Lei [1 ]
机构
[1] Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[3] IFW Dresden, POB 270116, D-01069 Dresden, Germany
关键词
CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA SYNTHESIS; LAYER; PHOTOLUMINESCENCE; TRANSITION; DIODES; MOS2;
D O I
10.1002/smll.201601556
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The controllable synthesis of uniform tungsten diselenide (WSe2) is crucial for its emerging applications due to the high sensitivity of its extraordinary physicochemical properties to its layer numbers. However, undesirable multilayer regions inevitably form during the fabrication of WSe2 via the traditional chemical vapor deposition process resulted from the lack of significantly energetically favorable competition between layer accumulation and size expansion. This work innovatively introduces Cu to occupy the hexagonal site positioned at the center of the six membered ring of the WSe2 surface, thus filtrates the undesired reaction path through precisely thermodynamical control and achieves self-limited growth WSe2 crystals. The as-obtained WSe2 crystals are characterized as strictly single-layer over the entire wafer. Furthermore, the strictly self-limited growth behavior can achieve the "win-win" cooperation with the synthesis efficiency. The fastest growth (approximate to 15 times of the growth rate in the previous work) of strictly monolayer WSe2 crystals thus far is realized due to the high-efficiency simultaneous selenization process. The as-proposed ultrafast Cu-assisted self-limited growth method opens a new avenue to fabricate strictly monolayer transition metal dichalcogenides crystals and further promotes their practical applications in the future industrial applications.
引用
收藏
页码:5741 / 5749
页数:9
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