InN layers grown by the HVPE

被引：8

作者：

Syrkin, A. L. ^{[1
]}

Ivantsov, V. ^{[1
]}

Usikov, A. ^{[1
]}

Dmitriev, V. A. ^{[1
]}

Chambard, G. ^{[2
]}

Ruterana, P. ^{[2
]}

Davydov, A. V. ^{[3
]}

Sundaresan, S. G. ^{[4
]}

Lutsenko, E. ^{[5
]}

Mudryi, A. V. ^{[6
]}

Readinger, E. D. ^{[7
]}

Chern-Metcalfe, G. D. ^{[7
]}

Wraback, M. ^{[7
]}

机构：

[1] Technol & Devices Int Inc, 12214 Plum Orchard Dr, Silver Spring, MD 20904 USA

[2] CNRS ENSICAEN, SIFCOM UMR 6176, F-14050 Caen, France

[3] NIST, MSEL, Gaithersburg, MD 20899 USA

[4] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

[5] Natl Acad Sci Belarus, Inst Phys, Minsk 220072, BELARUS

[6] Natl Acad Sci Belarus, Joint Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[7] US Army, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778646

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved, characteristics on HVPE InN template substrates. InN layers were grown by HVPE on GaN/sapphire HVPE templates. The (00.2) XRD rocking-curve of the best InN layer (RC) had the FWHM of about 375 arc see, being the narrowest XRD RCs ever reported for HVPE InN. Transmission Electron Microscopy (TEM) revealed that at the GaN/InN interface, the threading dislocations that come from GaN were transmitted into the InN layer. We estimated the dislocation density in HVPE grown InN to be in the low 10(9) cm(-2) range. Reflection high energy electron diffraction (RHEED) confirmed monocrystalline structure of the InN layers surfaced layers photoluminescence (PL) showed edge emission, around 0.8 eV. Hall measured free electron concentration was in the range of 10(19) -10(20) cm(-3) and electron mobility was similar to 200 cm(3)/V s. MBE growth of InN was performed on the HVPE grown InN template substrate demonstrating the improvement of material quality in the case of homo-epitaxial growth of InN. Demonstration of the high quality HYPE InN materials opens a new way for InN substrate development.

引用

页码：1792 / +

页数：2

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