Modeling and optimization of debris mitigation systems for laser and discharge-produced plasma in extreme ultraviolet lithography devices

被引:0
作者
不详
机构
[1] Argonne National Laboratory, Building 308, 9700 South Cass Avenue, Argonne, IL 60439, United States
[2] SEMATECH Corporation, 2706 Montopolis Drive, Austin, TX 78741, United States
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2007年 / 6卷 / 04期
关键词
debris mitigation; laser-produced plasma; discharge-produced plasma; lithography; numerical simulation; Monte Carlo method;
D O I
10.1117/1.28041281
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Physical models are developed to investigate the following conditions relevant to discharge-produced plasma (DPP) devices under development for extreme ultraviolet (EUV) lithography: gaseous jet propagation in the chamber, removal of neutral particles with a gaseous jet, and deviation of charged particles with a magnetic field. Several geometries of the mitigation systems are considered for removing debris during the EUV lithographic process. The design of a mitigation system is proposed and simulated with the computer models. The behavior of Xe, Li, and Sri debris in Ar and He jets is simulated by using the high energy interaction with general heterogeneous target systems (HEIGHTS) integrated package. Final energy and local distributions are calculated using experimental debris data from current EUV facilities. (C) 2007 Society of Photo-Optical Instrumentation Engineers.
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页数:6
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