Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories

被引：19

作者：

Golubovic, D. S. ^{[1
]}

Miranda, A. H. ^{[1
]}

Akil, N. ^{[1
]}

van Schaijk, R. T. F. ^{[2
]}

van Duuren, M. J. ^{[1
]}

机构：

[1] NXP Semicond, B-3000 Louvain, Belgium

[2] NXP Semicond, Nijmegen, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 12期

关键词：

vertical poly-Si diodes; resistive RAM; cross-point memory arrays;

D O I：

10.1016/j.mee.2007.03.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical polycrystalline silicon pn-diodes have been investigated as the select device for resistive non-volatile memories. The diodes have been fabricated up to the metal-1 level using basic processing steps of a CMOS front-end-of-line for 65 nm node and beyond. The study of the electric properties reveals that polycrystalline silicon diodes have a high current density in excess of 105 A/cm(2) and exhibit good rectification ratio, even at temperatures as high as 125 degrees C. Besides single devices, cross-point arrays with polycrystalline Silicon diodes have also been investigated. (C) 2007 Elsevier B.V. All rights reserved.

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页码：2921 / 2926

页数：6

相关论文

共 18 条

[1] LATERAL POLYSILICON PN DIODES - CURRENT-VOLTAGE CHARACTERISTICS SIMULATION BETWEEN 200-K AND 400-K USING A NUMERICAL APPROACH [J].

AZIZ, A ;

BONNAUD, O ;

LHERMITE, H ;

RAOULT, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :204-211

[2] Spatially extended nature of resistive switching in perovskite oxide thin films [J].

Chen, Xin ;

Wu, NaiJuan ;

Strozier, John ;

Ignatiev, Alex .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications [J].

Choi, DH ;

Lee, D ;

Sim, H ;

Chang, M ;

Hwang, HS .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[5] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J].

DEGRAAFF, HC ;

HUYBERS, M ;

DEGROOT, JG .

SOLID-STATE ELECTRONICS, 1982, 25 (01) :67-71

[6] Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip [J].

Gallagher, WJ ;

Parkin, SSP .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2006, 50 (01) :5-23

[7] Vertical p-i-n polysililcon diode with antifuse for stackable field-programmable ROM [J].

Herner, SB ;

Bandyopadhyay, A ;

Dunton, SV ;

Eckert, V ;

Gu, J ;

Hsia, KJ ;

Hu, S ;

Jahn, C ;

Kidwell, D ;

Konevecki, M ;

Mahajani, M ;

Park, K ;

Petti, C ;

Radigan, SR ;

Raghuram, U ;

Vienna, J ;

Vyvoda, MA .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (05) :271-273

[8]

HURKX GAM, 1992, IEEE T ELECTRON DEV, V39, P31

[9] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[10] Low-cost and nanoscale non-volatile memory concept for future silicon chips [J].

Lankhorst, MHR ;

Ketelaars, BWSMM ;

Wolters, RAM .

NATURE MATERIALS, 2005, 4 (04) :347-352