Reliability of MIM HAO capacitor for 70nm DRAM

被引：1

作者：

Hong, K ^{[1
]}

Kil, DS ^{[1
]}

Woo, HK ^{[1
]}

Kim, J ^{[1
]}

Song, HS ^{[1
]}

Park, KS ^{[1
]}

Yeom, SJ ^{[1
]}

Yang, HS ^{[1
]}

机构：

[1] Hynix Semicond Inc, R&D Div, Ichon 467701, Kyoungki Do, South Korea

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

reliability; MIM capacitor; DRAM; HfO2; Al2O3; HfxAlyOz; ALD;

D O I：

10.1109/RELPHY.2005.1493205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to verify the package reliability of MIM HAO capacitor module, mass productive 256M DDR processes with 0.10 mu m design rule were adopted. The used capacitor dielectrics were HAH and HfxAlyOz and showed Tox.eq of 12 angstrom and Lc of < 0.2fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get high probe test yield, and high package yield when MIM HAO capacitor was introduced instead of SIS Al2O3 capacitor. With package samples, refresh time of device did not degrade after IR and EFR stresses and finally, we could confirm the reliability of MIM HAO capacitor in package level through long term test of operation lifetime.

引用

页码：686 / 687

页数：2