Investigations on SiO2/HfO2 mixtures for nanosecond and femtosecond pulses

被引：39

作者：

Jensen, Lars O. ^{[1
]}

Mende, Mathias ^{[1
]}

Blaschke, Holger ^{[1
]}

Ristau, Detlev ^{[1
]}

Duy Nguyen ^{[2
]}

Emmert, Luke ^{[2
]}

Rudolph, Wolfgang ^{[2
]}

机构：

[1] Laser Zentrum Hannover eV, Hollerithallee 8, Hannover, Germany

[2] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

来源：

LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2010 | 2010年 / 7842卷

关键词：

Oxide Mixtures; SiO2/HfO2; LIDT;

D O I：

10.1117/12.867238

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

After several investigations in laser induced damage behavior of oxide mixtures of different compositions, also HfO2 could be steplessly mixed with SiO2. A study of SiO2/HfO2 IBS single layers and high reflectors is presented. Damage testing has been performed at 800nm and 355nm on an extensive set of single layers employing different mixture ratios of silica and hafnia. The analysis of the response of optical single layer coatings to femtosecond and nanosecond pulse exposure provides input for further coating designs, in particular for the optimization in respect to the damage threshold properties. A deeper understanding of the damage mechanisms is gained by comparing the ns and fs pulse results as a function of the mixing ratio.

引用

页数：10

共 13 条

[1]

Jensen L., 2009, LASER INDUCED DAMAGE, V7504, p75041E

[2] Quantized behavior of the LIDT in the fs-range in dielectric layers [J].

Jupé, M ;

Jensen, L ;

Starke, K ;

Ristau, D ;

Melninkaitis, A ;

Grigonis, R ;

Sirutkaitis, V .

LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2004, 2005, 5647 :53-60

[3]

Jupe M., 2007, LASER INDUCED DAMAGE, V6720

[4]

Jupe M., 2006, LASER INDUCED DAMAGE, V6403, p64031A

[5]

Lappschies M., 2007, OPTICAL INTERFERENCE, pTuA7

[6]

Lappschies M., 2004, OPTICAL INTERFERENCE, V5250, pTuE4

[7] Scaling laws of femtosecond laser pulse induced breakdown in oxide films [J].

Mero, M ;

Liu, J ;

Rudolph, W ;

Ristau, D ;

Starke, K .

PHYSICAL REVIEW B, 2005, 71 (11)

[8] Transient phenomena in the dielectric breakdown of HfO2 optical films probed by ultrafast laser pulse pairs [J].

Nguyen, Duy N. ;

Emmert, Luke A. ;

Patel, Dinesh ;

Menoni, Carmen S. ;

Rudolph, Wolfgang .

APPLIED PHYSICS LETTERS, 2010, 97 (19)

[9]

Ristau D., 1989, NIST SPEC PUBL, V775, P414

[10] High dielectric constant gate oxides for metal oxide Si transistors [J].

Robertson, J .

REPORTS ON PROGRESS IN PHYSICS, 2006, 69 (02) :327-396

← 1 2 →