Molecular dynamics simulation of thermal conductivity of silicon thin film

被引：11

作者：

Wang, Haitao ^{[1
]}

Xu, Yibin

Shimono, Masato

Tanaka, Yoshihisa

Yamazaki, Masayoshi

机构：

[1] Natl Inst Mat Sci, Mat Database Stn, Tokyo 1530061, Japan

[2] Natl Inst Mat Sci, Comp Mat Sci Ctr, Tsukuba, Ibaraki 3050047, Japan

[3] Natl Inst Mat Sci, Comp & Coatings Ctr, Tsukuba, Ibaraki 3050047, Japan

来源：

MATERIALS TRANSACTIONS | 2007年 / 48卷 / 09期

关键词：

silicon thin film; thermal conductivity; molecular dynamics; Boltzmann transport equation; phonon boundary scattering;

D O I：

10.2320/matertrans.MAW200710

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We computed the thermal conductivity of silicon single crystal thin film with a thickness of 25 nm-134 nm at room temperature by non-equilibrium molecular dynamics simulation. The thermal conductivity was shown to depend on the thickness of the film, and is markedly lower than that in bulk silicon. The phonon classical thermal conductivity theory, incorporating the Boltzmann transport equation, was used to establish a phonon scattering model for size dependence. The results show that boundary scattering is very strong for phonon transport in silicon thin film.

引用

页码：2419 / 2421

页数：3

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