Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

被引：11

作者：

Drexler, C. ^{[1
]}

Bel'kov, V. V. ^{[2
]}

Ashkinadze, B. ^{[3
]}

Olbrich, P. ^{[1
]}

Zoth, C. ^{[1
]}

Lechner, V. ^{[1
]}

Terent'ev, Ya. V. ^{[2
]}

Yakovlev, D. R. ^{[2
,4
]}

Karczewski, G. ^{[5
]}

Wojtowicz, T. ^{[5
]}

Schuh, D. ^{[1
]}

Wegscheider, W. ^{[1
]}

Ganichev, S. D. ^{[1
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[4] TU Dortmund Univ, D-44221 Dortmund, Germany

[5] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

D O I：

10.1063/1.3507896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on microwave (mw) radiation induced electric currents in (Cd, Mn)Te/(Cd, Mg) Te and InAs/(In, Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current. (c) 2010 American Institute of Physics. [doi:10.1063/1.3507896]

引用

页数：3

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