This work shows that the coercive voltage or coercive electric field, which is the voltage or electric field to make the net polarization zero in a ferroelectric capacitor, depends on the direction of the sweep voltage applied externally. The difference in the coercive fields is shown in a metal-ferroelectric polymer-metal as an imprint phenomenon after the polymer, poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), was prepared by using a spin coating method. This imprint can induce a read/write failure in ferroelectric memory devices; hence, it is important to study the imprint for reliability. The difference in the coercive voltages increases as the thickness of the capacitors increases while the difference in the coercive fields, the coercive voltage normalized for thickness remains nearly constant for all thicknesses. In conclusion, the imprint phenomenon is derived not from inside the ferroelectric polymer but from charge injection into the electrode.
机构:
Univ Malaya, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, Malaysia
Univ Technol Baghdad, Nanotechnol & Adv Mat Res Ctr, Baghdad 10066, IraqUniv Malaya, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, Malaysia
Mahdi, Rahman Ismael
Gan, W. C.
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Univ Malaya, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, MalaysiaUniv Malaya, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, Malaysia
Gan, W. C.
Majid, W. H. Abd
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Univ Malaya, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, MalaysiaUniv Malaya, Dept Phys, Low Dimens Mat Res Ctr, Kuala Lumpur 50603, Malaysia
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Yonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Lee, Han Joo
Cho, Yongjae
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Yonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Purdue Univ, Elmore Family Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nano Technol Ctr, W Lafayette, IN 47907 USAYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Cho, Yongjae
Park, Jeehong
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Yonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Park, Jeehong
Cho, Hyunmin
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Yonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USAYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Cho, Hyunmin
Han, Hyowon
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Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Han, Hyowon
Park, Cheolmin
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Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Park, Cheolmin
Yi, Yeonjin
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Yonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Yi, Yeonjin
An, Tae Kyu
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Korea Natl Univ Transportat, Dept Polymer Sci & Engn, 50 Daehak Ro, Chungju 27469, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
An, Tae Kyu
Park, Ji Hoon
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Pukyong Natl Univ, Dept Met Engn, Busan 48513, South Korea
Pukyong Natl Univ, Dept Smart Green Technol Engn, Busan 48513, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
Park, Ji Hoon
Im, Seongil
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Yonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South KoreaYonsei Univ, Van der Waals Mat Res Ctr, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea