Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposition

被引：25

作者：

He, W. ^{[1
,2
]}

Lu, S. L. ^{[1
]}

Dong, J. R. ^{[1
]}

Zhao, Y. M. ^{[1
]}

Ren, X. Y. ^{[1
]}

Xiong, K. L. ^{[1
]}

Li, B. ^{[1
]}

Yang, H. ^{[1
]}

Zhu, H. M. ^{[3
]}

Chen, X. Y. ^{[3
]}

Kong, X. ^{[4
]}

机构：

[1] CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] CAS, Fujian Inst Res Struct Matter, Fuzhou 352001, Peoples R China

[4] China Univ Petr, Beijing 102249, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

关键词：

SOLAR-CELLS; PHASE EPITAXY; GAAS/GE HETEROSTRUCTURES; TEMPERATURE-DEPENDENCE; GA0.5IN0.5P; PHOTOLUMINESCENCE; GA0.52IN0.48P; DISORDER; MOVPE;

D O I：

10.1063/1.3492854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural and optical properties of Si-doped as well as nominally undoped GaInP epilayers grown on Germanium substrates by metal-organic chemical vapor deposition have been investigated by high resolution transmission electron microscope and photoluminescence (PL). Si incorporation results in an increased inner band PL transition and a blue shift of PL energy with increasing temperature, which arises from the trapping states around Ge-GaInP interface due to Ge diffusion to GaInP epilayer as well as Si doping. For the inter band PL transition, a competition between the emission processes near the band edge and in the ordered GaInP domains is responsible for the inverted S shape temperature dependence of PL peaks. By analyzing the time-resolved PL results, we attribute this emission near the ordered states to the localized states due to the potential fluctuation, which is induced by the compositional inhomogeneity of Ga and In in the partially ordered GaInP. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492854]

引用

页数：3

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