Room-temperature formation of magnesium-oxygen complex impurities in silicon

被引：5
|
作者：
Ho, LT [1 ]
机构：
[1] Acad Sinica, Inst Phys, Taipei, Taiwan
来源：
PHYSICA B | 2001年 / 302卷
关键词：
complex impurity; magnesium; oxygen; silicon;
D O I：
10.1016/S0921-4526(01)00428-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magnesium which is thermally diffused into silicon is well-known to behave like an interstitial donor. Recent study indicates that magnesium in silicon containing proper amount of oxygen can pair with oxygen to form magnesium-oxygen complex impurity, which is also an interstitial donor in silicon. Our study on this subject further shows that such magnesium-oxygen complex impurities can even be formed by interstitial magnesium and dispersed oxygen in silicon at quite low temperatures such as room-temperature. Experimentally observed results clearly demonstrating this newly found phenomenon are given. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：197 / 200
页数：4
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