Room-temperature formation of magnesium-oxygen complex impurities in silicon

被引：5
|
作者：
Ho, LT [1 ]
机构：
[1] Acad Sinica, Inst Phys, Taipei, Taiwan
来源：
PHYSICA B | 2001年 / 302卷
关键词：
complex impurity; magnesium; oxygen; silicon;
D O I：
10.1016/S0921-4526(01)00428-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magnesium which is thermally diffused into silicon is well-known to behave like an interstitial donor. Recent study indicates that magnesium in silicon containing proper amount of oxygen can pair with oxygen to form magnesium-oxygen complex impurity, which is also an interstitial donor in silicon. Our study on this subject further shows that such magnesium-oxygen complex impurities can even be formed by interstitial magnesium and dispersed oxygen in silicon at quite low temperatures such as room-temperature. Experimentally observed results clearly demonstrating this newly found phenomenon are given. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：197 / 200
页数：4
相关论文
共 47 条
  • [21] Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate
    Rodriguez, J. B.
    Cerutti, L.
    Grech, P.
    Tournie, E.
    APPLIED PHYSICS LETTERS, 2009, 94 (06)
  • [22] Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity
    Zhou, Y
    Snow, PA
    Russell, PS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3): : 40 - 42
  • [23] Development of Oxide-Type Cathode Materials towards Room-Temperature Magnesium Rechargeable Batteries
    Kobayashi, Hiroaki
    ELECTROCHEMISTRY, 2024, 92 (10)
  • [24] A sensitive probe for oxygen sensing in gas mixtures, based on room-temperature phosphorescence quenching
    Badia, R
    DiazGarcia, ME
    SanzMedel, A
    MIKROCHIMICA ACTA, 1995, 121 (1-4) : 51 - 61
  • [25] An Optical Olfactory Sensor Based on Porous Silicon Infiltrated with Room-Temperature Ionic Liquid Arrays
    Shang, Yunling
    Zhang, Haijuan
    Wang, Xiaobo
    Wu, Jianmin
    CHEMISTRY-A EUROPEAN JOURNAL, 2011, 17 (48) : 13400 - 13404
  • [26] Room-temperature wafer bonding of silicon and lithium niobate by means of argon-beam surface activation
    Takagi, H
    Maeda, R
    Suga, T
    INTEGRATED FERROELECTRICS, 2002, 50 : 53 - 59
  • [27] Room-temperature electroluminescence from erbium-doped porous silicon composites for infrared LED applications
    Lopez, HA
    Fauchet, PM
    RARE-EARTH-DOPED MATERIALS AND DEVICES IV, 2000, 3942 : 87 - 96
  • [28] Effect of oxygen on the surface conductance of porous silicon: towards room temperature sensor applications
    Green, S
    Kathirgamanathan, P
    MATERIALS LETTERS, 2002, 52 (1-2) : 106 - 113
  • [29] Broadband photodetector based on 2D layered PtSe2/silicon heterojunction at room-temperature
    Zhou, Kai
    Shen, Jun
    Li, Xiaoxia
    Hong, Xin
    Feng, Wenlin
    Tang, Xinyue
    Jiang, Xingchi
    Wei, Dacheng
    Chen, Yifu
    Liu, Xueqin
    Xie, Yi
    Wei, Dapeng
    Sun, Tai
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 123
  • [30] Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
    Saeedi, Kamyar
    Simmons, Stephanie
    Salvail, Jeff Z.
    Dluhy, Phillip
    Riemann, Helge
    Abrosimov, Nikolai V.
    Becker, Peter
    Pohl, Hans-Joachim
    Morton, John J. L.
    Thewalt, Mike L. W.
    SCIENCE, 2013, 342 (6160) : 830 - 833
12345