Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

被引：24

作者：

Miyata, Toshihiro ^{[1
]}

Tokunaga, Hiroki ^{[1
]}

Watanabe, Kyosuke ^{[1
]}

Ikenaga, Noriaki ^{[1
]}

Minami, Tadatsugu ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, 7-1 Nonoichi, Nonoichi, Ishikawa 9218501, Japan

来源：

THIN SOLID FILMS | 2020年 / 697卷

关键词：

Magnetron sputtering; Oxide thin film; Cu2O; ZnO; AZO; Solar cells; OXIDE BUFFER LAYER; CUPROUS-OXIDE;

D O I：

10.1016/j.tsf.2020.137825

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photovoltaic properties of Cu2O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for mull-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering. For an Al-doped ZnO (AZO)/n-ZnO/p-Cu2O heterojunction solar cell prepared using r.f. power superimposed d.c magnetron sputtering, we achieved the highest efficiency yet reported (3.22%) by optimizing sputtering conditions such as the substrate-target distance and the r.f.:d.c. power ratio. This value represents characteristics that exceed those of AZO/Cu2O solar cells having a similar structure based on r.f. power superimposed d.c magnetron sputtering.

引用

页数：5

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