Scanning capacitance microscopy on ultranarrow doping profiles in Si

Scanning capacitance microscopy (SCM) has been performed both in cross-sectional and in angle-beveling configurations on ultranarrow B spikes with a full width at half-maximum smaller than the SCM probe diameter. The dependence of the SCM response on the magnification factor has been studied, demonstrating an improvement both in terms of spatial resolution and sensitivity by angle-beveling sample preparation. The range of applicability of the direct inversion approach for the quantification of SCM profiles on ultranarrow B spikes has been assessed for high doping spikes thicker than 3 nm and measured on bevel. Two-dimensional simulations allowed the reproduction of all the main features of the experimental SCM profiles. (C) 2003 American Institute of Physics.