Defect engineering in Boron Nitride for catalysis

被引:25
作者
Ding, Yi [1 ,2 ]
Torres-Davila, Femand [1 ,3 ]
Khater, Ahmad [1 ]
Nash, David [3 ]
Blair, Richard [4 ]
Tetard, Lauren [1 ,2 ,3 ]
机构
[1] Univ Cent Florida, NanoSci Technol Ctr, 12424 Res Pkwy, Orlando, FL 32826 USA
[2] Univ Cent Florida, Dept Mat Sci & Engn, 12760 Pegasus Dr, Orlando, FL 32816 USA
[3] Univ Cent Florida, Dept Phys, 4111 Libra Dr, Orlando, FL 32816 USA
[4] Univ Cent Florida, Florida Space Inst, 4111 Libra Dr, Orlando, FL 32816 USA
关键词
OXIDATIVE DEHYDROGENATION; N-BUTANE; PROPANE; ENERGY;
D O I
10.1557/mrc.2018.113
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Catalytic processes are critical steps in numerous industrial processes. The discovery of high reactivity of defects in metal-free two-dimensional materials has bolstered their emergence as catalysts. Here we consider the effect of defect-inducing methods in hexagonal boron nitride (h-BN) on their performance for olefin and CO2 hydrogenation. We compare the changes introduced by ball milling and heat treatment in h-BN and show how varying the treatment conditions can impact the properties. We provide some evidence of the reactivity of the powders. Our results highlight how characterization can be exploited to assess the potential catalytic activity of h-BN for heterogeneous catalysis.
引用
收藏
页码:1236 / 1243
页数:8
相关论文
共 41 条
[1]   Two-dimensional flexible nanoelectronics [J].
Akinwande, Deji ;
Petrone, Nicholas ;
Hone, James .
NATURE COMMUNICATIONS, 2014, 5
[2]   Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study [J].
Aradi, E. ;
Naidoo, S. R. ;
Billing, D. G. ;
Wamwangi, D. ;
Motochi, I. ;
Derry, T. E. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 331 :140-143
[3]   SURFACE-ACTIVITY OF A BORON-NITRIDE POWDER - A VIBRATIONAL STUDY [J].
BARATON, MI ;
MERLE, T ;
QUINTARD, P ;
LORENZELLI, V .
LANGMUIR, 1993, 9 (06) :1486-1491
[4]   Defect-induced blue luminescence of hexagonal boron nitride [J].
Berzina, B. ;
Korsaks, V. ;
Trinkler, L. ;
Sarakovskis, A. ;
Grube, J. ;
Bellucci, S. .
DIAMOND AND RELATED MATERIALS, 2016, 68 :131-137
[5]   THE ELECTRICAL-RESISTIVITY OF BORON-NITRIDE OVER THE TEMPERATURE-RANGE 700-DEGREES-C TO 1400-DEGREES-C [J].
CARPENTER, LG ;
KIRBY, PJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (07) :1143-1151
[6]  
Eckert R., 2017, ANGEW CHEM, V129, P2485
[7]   Infrared spectrum of single-walled boron nitride nanotubes [J].
Fakrach, B. ;
Rahmani, A. ;
Chadli, H. ;
Sbai, K. ;
Bentaleb, M. ;
Bantignies, J. -L. ;
Sauvajol, J. -L. .
PHYSICAL REVIEW B, 2012, 85 (11)
[8]  
FOMICHEV VA, 1971, FIZ TVERD TELA+, V13, P1031
[9]   Microstructural characterization of amorphous and nanocrystalline boron nitride prepared by high-energy ball milling [J].
Ghosh, J. ;
Mazumdar, S. ;
Das, M. ;
Ghatak, S. ;
Basu, A. K. .
MATERIALS RESEARCH BULLETIN, 2008, 43 (04) :1023-1031
[10]   Strained monolayer germanene with 1 x 1 lattice on Sb(111) [J].
Gou, Jian ;
Zhong, Qing ;
Sheng, Shaoxiang ;
Li, Wenbin ;
Cheng, Peng ;
Li, Hui ;
Chen, Lan ;
Wu, Kehui .
2D MATERIALS, 2016, 3 (04)