ε-Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

被引:53
作者
Chen, Zimin [1 ,2 ]
Lu, Xing [1 ,2 ]
Tu, Yujia [1 ]
Chen, Weiqu [1 ]
Zhang, Zhipeng [1 ]
Cheng, Shengliang [1 ]
Chen, Shujian [1 ]
Luo, Hongtai [1 ]
He, Zhiyuan [3 ]
Pei, Yanli [1 ,2 ]
Wang, Gang [1 ,2 ,4 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China
[2] Sun Yat Sen Univ, HEMC, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Peoples R China
[3] Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, 5 Elect Res Inst, Guangzhou 510610, Peoples R China
[4] Sun Yat Sen Univ, Foshan Inst, Foshan 528225, Peoples R China
关键词
gallium oxide; piezoelectricity; radio frequency resonator; surface acoustic waves; NITRIDE THIN-FILMS; ALN; WURTZITE; STRESS;
D O I
10.1002/advs.202203927
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The explosion of mobile data from the internet of things (IoT) is leading to the emergence of 5G technology with dramatic frequency band expansion and efficient band allocations. Along with this, the demand for high-performance filters for 5G radio frequency (RF) front-ends keeps growing. The most popular 5G filters are constructed by piezoelectric resonators based on AlN semiconductor. However, AlN possesses a piezoelectric constant d(33) lower than 5 pm V-1 and it becomes necessary to develop novel semiconductors with larger piezoelectric constant. In this work, it is shown that strong piezoelectricity exists in epsilon-Ga2O3. High-quality phase-pure epsilon-Ga2O3 thin films with a relatively low residual stress are prepared. A switching spectroscopy piezoelectric force microscope (SS-PFM) measurement is carried out and the piezoelectric constant d(33) of epsilon-Ga2O3 is determined to be approximate to 10.8-11.2 pm V-1, which is twice as large as that of AlN. For the first time, surface acoustic wave (SAW) resonators are demonstrated on the epsilon-Ga2O3 thin films and different vibration modes resonating in the GHz range are observed. The results suggest that epsilon-Ga2O3 is a great material candidate for application in piezoelectric devices, thanks to its wide bandgap, strong piezoelectric property, small acoustic impedance, and low residual stress.
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页数:7
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