Effects of post-growth annealing on the structure and electro-optical properties of low-temperature grown GaAs

被引:15
作者
Youn, Doo-Hyeb [1 ]
Lee, Seung-Hwan [1 ]
Ryu, Han-Cheol [1 ]
Jung, Se-Young [1 ]
Kang, Seung-Bum [1 ]
Kwack, Min-Hwan [1 ]
Kim, Sungil [1 ]
Choi, Sang-Kuk [1 ]
Baek, Mun-Cheol [1 ]
Kang, Kwang-Yong [1 ]
Kim, Chang-Seop [2 ]
Yee, Ki-Ju [2 ]
Ji, Young-Bin [3 ]
Lee, Eui-Su [3 ]
Jeon, Tae-In [3 ]
Kim, Seong-Jin [4 ]
Kumar, Sanjeev [5 ,6 ]
Kim, Gil-Ho [5 ,6 ]
机构
[1] Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[3] Korea Marine Univ, Dept Elect & Elect Engn, Pusan 606791, South Korea
[4] Mitsubishi Cable Ind Ltd, Amagasaki, Hyogo 6600856, Japan
[5] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
[6] Sungkyunkwan Univ, Adv Inst Nanotechnol, Suwon 440746, South Korea
关键词
D O I
10.1063/1.2946452
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper investigates how postgrowth annealing affects the structure and the electro-optical properties of low-temperature grown GaAs (LT-GaAs). A systematic study of as-grown and annealed LT-GaAs revealed that the carrier lifetime is directly related to the density of the An duster and distance between As clusters. The Ga/As compositional ratio and the crystal structure of As clusters were observed for the first time. The As/Ga ratio of the As clusters is higher than that obtained from the LT-GaAs. The carrier lifetime of the annealed LT-GaAs increases as the annealing temperature increases from 400 (less than 30 fs) to 800 degrees C (824 fs). Under the annealing temperatures ranging from 600 to 700 degrees C for 90 s, we observed the emission of terahertz radiation using the annealed LT-GaAs grown at temperatures ranging from 260 to 320 degrees C. (c) 2008 American Institute of Physics.
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页数:5
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