Effects of post-growth annealing on the structure and electro-optical properties of low-temperature grown GaAs
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作者:
Youn, Doo-Hyeb
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Youn, Doo-Hyeb
[1
]
Lee, Seung-Hwan
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Lee, Seung-Hwan
[1
]
Ryu, Han-Cheol
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Ryu, Han-Cheol
[1
]
Jung, Se-Young
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Jung, Se-Young
[1
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Kang, Seung-Bum
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kang, Seung-Bum
[1
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Kwack, Min-Hwan
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kwack, Min-Hwan
[1
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Kim, Sungil
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kim, Sungil
[1
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Choi, Sang-Kuk
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Choi, Sang-Kuk
[1
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Baek, Mun-Cheol
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Baek, Mun-Cheol
[1
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Kang, Kwang-Yong
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Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kang, Kwang-Yong
[1
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Kim, Chang-Seop
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Chungnam Natl Univ, Dept Phys, Taejon 305764, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kim, Chang-Seop
[2
]
Yee, Ki-Ju
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Chungnam Natl Univ, Dept Phys, Taejon 305764, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Yee, Ki-Ju
[2
]
Ji, Young-Bin
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Korea Marine Univ, Dept Elect & Elect Engn, Pusan 606791, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Ji, Young-Bin
[3
]
Lee, Eui-Su
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Korea Marine Univ, Dept Elect & Elect Engn, Pusan 606791, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Lee, Eui-Su
[3
]
Jeon, Tae-In
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Korea Marine Univ, Dept Elect & Elect Engn, Pusan 606791, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Jeon, Tae-In
[3
]
Kim, Seong-Jin
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Mitsubishi Cable Ind Ltd, Amagasaki, Hyogo 6600856, JapanElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kim, Seong-Jin
[4
]
Kumar, Sanjeev
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机构:
Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
Sungkyunkwan Univ, Adv Inst Nanotechnol, Suwon 440746, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kumar, Sanjeev
[5
,6
]
Kim, Gil-Ho
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机构:
Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
Sungkyunkwan Univ, Adv Inst Nanotechnol, Suwon 440746, South KoreaElect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
Kim, Gil-Ho
[5
,6
]
机构:
[1] Elect & Telecommun Res Inst, IT Components & Mat Technol Res Div, Taejon 305350, South Korea
[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[3] Korea Marine Univ, Dept Elect & Elect Engn, Pusan 606791, South Korea
[4] Mitsubishi Cable Ind Ltd, Amagasaki, Hyogo 6600856, Japan
[5] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
[6] Sungkyunkwan Univ, Adv Inst Nanotechnol, Suwon 440746, South Korea
This paper investigates how postgrowth annealing affects the structure and the electro-optical properties of low-temperature grown GaAs (LT-GaAs). A systematic study of as-grown and annealed LT-GaAs revealed that the carrier lifetime is directly related to the density of the An duster and distance between As clusters. The Ga/As compositional ratio and the crystal structure of As clusters were observed for the first time. The As/Ga ratio of the As clusters is higher than that obtained from the LT-GaAs. The carrier lifetime of the annealed LT-GaAs increases as the annealing temperature increases from 400 (less than 30 fs) to 800 degrees C (824 fs). Under the annealing temperatures ranging from 600 to 700 degrees C for 90 s, we observed the emission of terahertz radiation using the annealed LT-GaAs grown at temperatures ranging from 260 to 320 degrees C. (c) 2008 American Institute of Physics.