Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric Field Profile

被引：39

作者：

Nada, Masahiro ^{[1
]}

Muramoto, Yoshifumi ^{[1
]}

Yokoyama, Haruki ^{[1
]}

Shigekawa, Naoteru ^{[1
]}

Ishibashi, Tadao ^{[1
]}

Kodama, Satoshi ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

GAIN-BANDWIDTH PRODUCT; INGAAS; MULTIPLICATION; LAYER;

D O I：

10.1143/JJAP.51.02BG03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a new p-down inverted avalanche photodiode (APD) structure suitable for a scaled APD with smaller junctions. The inverted APD structure has an edge-field buffer layer to prevent undesirable edge breakdown and suppress the excess surface leakage current associated with the InGaAs mesa surface. The fabricated back-illuminated InAlAs/InGaAs APDs show excellent multiplication characteristics without edge breakdown. An f(3dB) of 27 GHz and a GB product of 220 GHz are obtained for these APDs. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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