Band offset studies in pulse laser deposited Zn1-xCdxO/ZnO hetero-junctions

被引：16

作者：

Devi, Vanita ^{[1
]}

Kumar, Manish ^{[2
]}

Choudhary, R. J. ^{[2
]}

Phase, D. M. ^{[2
]}

Kumar, Ravindra ^{[1
]}

Joshi, B. C. ^{[1
]}

机构：

[1] Jaypee Inst Informat Technol, Dept Phys & Mat Sci & Engn, Noida 201307, India

[2] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 22期

关键词：

ZNO THIN-FILMS; FLAME TRANSPORT APPROACH; LIGHT-EMITTING-DIODES; SOL-GEL METHOD; FABRICATION; SENSOR; ELECTROLUMINESCENCE; NANOSTRUCTURES; NETWORKS; DEVICES;

D O I：

10.1063/1.4922425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence and conduction band offsets of Zn1-xCdxO/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (Delta E-C/Delta E-V) was found to be 0.77 and 0.59 for Zn0.95Cd0.05O/ZnO and Zn0.90Cd0.10O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons. (C) 2015 AIP Publishing LLC.

引用

页数：5

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