Odd-integer quantum Hall effect in graphene: Interaction and disorder effects

被引:64
作者
Sheng, L. [1 ]
Sheng, D. N.
Haldane, F. D. M.
Balents, Leon
机构
[1] Univ Houston, Dept Phys, Houston, TX 77204 USA
[2] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[3] Calif State Univ Northridge, Dept Phys & Astron, Northridge, CA 91330 USA
[4] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[5] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.99.196802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the competition between the long-range Coulomb interaction, disorder scattering, and lattice effects in the integer quantum Hall effect (IQHE) in graphene. By direct transport calculations, both nu=1 and nu=3 IQHE states are revealed in the lowest two Dirac Landau levels. However, the critical disorder strength above which the nu=3 IQHE is destroyed is much smaller than that for the nu=1 IQHE, which may explain the absence of a nu=3 plateau in recent experiments. While the excitation spectrum in the IQHE phase is gapless within numerical finite-size analysis, we do find and determine a mobility gap, which characterizes the energy scale of the stability of the IQHE. Furthermore, we demonstrate that the nu=1 IQHE state is a Dirac valley and sublattice polarized Ising pseudospin ferromagnet, while the nu=3 state is an xy plane polarized pseudospin ferromagnet.
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页数:4
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