Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

被引：182

作者：

Suzuki, Toshio ^{[1
]}

Sasaki, Tomoyuki ^{[2
]}

Oikawa, Tohru ^{[2
]}

Shiraishi, Masashi ^{[3
]}

Suzuki, Yoshishige ^{[3
]}

Noguchi, Kiyoshi ^{[2
]}

机构：

[1] Akita Prefectural Res & Dev Ctr, Akita Res Inst Adv Technol, AIT, Akita 0101623, Japan

[2] TDK Corp, SQ Res Ctr, Nagano 3858555, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

INJECTION; SILICON;

D O I：

10.1143/APEX.4.023003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 mu m and 1.3 ns by the Hanle-type spin precession, respectively. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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