Identification of Sn variants of the E′ center in Sn-doped SiO2

被引：35

作者：

Chiodini, N ^{[1
]}

Meinardi, F ^{[1
]}

Morazzoni, F ^{[1
]}

Paleari, A ^{[1
]}

Scotti, R ^{[1
]}

Spinolo, G ^{[1
]}

机构：

[1] Univ Milan, Dipartimento Sci Mat, INFM, I-20125 Milan, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.58.9615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron paramagnetic resonance data on x-ray irradiated Sn-doped SiO2 samples produced by the sol-gel method are presented. Two variants of Sn-related sites were identified, an orthorhombic one with g(1)=1.994, g(2)=1.986, and g(3)=1.975 and an axial one with g(parallel to)=1.994 and g(perpendicular to)=1.977. A relation between g anisotropy and the spin-orbit coupling constant along the isoelectronic Si-Ge-Sn series strongly supports the attribution to E'-Sn centers consisting of unpaired spins in sp(3) orbitals of three-coordinated Sn sites. An asymmetric 215 mT doublet due to hyperfine interaction with Sn isotopes with non-null nuclear spin confirms this assignment. [S0163-1829(98)08439-2].

引用

页码：9615 / 9618

页数：4

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