Low-Noise CMOS Amplifier for Readout Electronic of Resistive NEMS Audio Sensor

被引：0

作者：

Nebhen, J. ^{[1
]}

Savary, E. ^{[1
]}

Rahajandraibe, W. ^{[1
]}

Dufaza, C. ^{[1
]}

Meillere, S. ^{[1
]}

Kussener, E. ^{[1
]}

Barthelemy, H. ^{[1
]}

Czarny, J. ^{[2
]}

Lhermet, H. ^{[2
]}

机构：

[1] Aix Marseille Univ, CNRS, IM2NP UMR 7334, F-13451 Marseille, France

[2] CEA LETI, F-38054 Grenoble, France

来源：

2014 SYMPOSIUM ON DESIGN, TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS (DTIP) | 2014年

关键词：

MEMS microphone; LNA; Low-noise; OTA; Audio sensor; SIGMA-DELTA-MODULATOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to high-resolution digital output. Low-noise low-power CMOS operational transconductance amplifier (OTA) is presented. The low-noise amplifier (LNA) has been designed in a 0.28 mu m CMOS process with a 2.5 V supply voltage and occupies an area of 120 x 160 mu m(2). For the Post-layout Simulation, the OTA achieves a 65 dB DC gain. It achieves a noise floor of 6 nV/root Hz within the frequency range from 1 Hz to 10 kHz. The total power consumption including the common mode feedback circuit (CMFB) and the biasing circuit is 150 mu W.

引用

页码：83 / 86

页数：4

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