On the Investigation of Interface Defects of Solar Cells: Lead-Based vs Lead-Free Perovskite

被引:93
作者
Basyoni, Marwa Sayed Salem [1 ,2 ]
Salah, Mostafa M. [3 ]
Mousa, Mohamed [3 ]
Shaker, Ahmed [4 ]
Zekry, Abdelhalim [4 ]
Abouelatta, Mohamed [4 ]
Alshammari, Mohammad T. [5 ]
Al-Dhlan, Kawther A. [5 ]
Gontrand, Christian [6 ,7 ]
机构
[1] Univ Hail, Coll Comp Sci & Engn, Dept Comp Engn, Hail 2240, Saudi Arabia
[2] Modern Sci & Arts Univ, Fac Engn, Dept Elect Commun & Elect Syst Engn, Cairo 12451, Egypt
[3] Future Univ Egypt, Elect Engn Dept, Cairo 11835, Egypt
[4] Ain Shams Univ, Fac Engn, Cairo 11517, Egypt
[5] Univ Hail, Comp Sci & Engn Coll, Dept Comp Sci & Informat, Hail 2240, Saudi Arabia
[6] Natl Inst Appl Sci Lyon INSA Lyon, F-69621 Villeurbanne, France
[7] Univ Euromediterraneenne Fes, INSA Fes, IEP, Fes 30120, Morocco
关键词
Lead; Photovoltaic cells; II-VI semiconductor materials; Tin; Zinc oxide; Charge carrier processes; Permittivity; Interface defects; lead based perovskite solar cell; lead free perovskite solar cell; SCAPS-1D; ELECTRON-TRANSPORT LAYER; HALIDE PEROVSKITES; EFFICIENCY; STABILITY; IODIDE; PHOTOLUMINESCENCE; PERFORMANCE; FABRICATION; HYSTERESIS; STATES;
D O I
10.1109/ACCESS.2021.3114383
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Perovskite solar cells (PSCs) have drawn significant consideration as a competing solar cell technology because of the drastic advance in their power conversion efficiency (PCE) over the last two decades. The interfaces between the electron transport layer (ETL) and the absorber layer and between the absorber layer and the hole transport layer (HTL) have a major impact on the performance of the PSCs. In this paper, we have investigated the defect interfaces between ETL/absorber layer and absorber layer/HTL of calibrated experimental CH3NH3PbX3 lead-based and FASnI(3) lead-free PSCs. The influence of the defect interfaces is studied in order to find the optimum value for the maximum possible PCE. While the PCE has not been enhanced considerably for the lead-based, it is boosted from 1.76% to 5.35% for lead-free PSCs. Also, bulk traps were found to have minor role in comparison with interface traps for the lead-free cell while they have a significant impact for the lead-based cell. The results presented in this work would shed some light on designing interface defects of various types of practical PSC structures and demonstrates the crucial impact of the interface defects on lead-free vs lead-based PSCs. All simulation studies are performed by using SCAPS-1D simulator.
引用
收藏
页码:130221 / 130232
页数:12
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