Preparation of a hyperbranched polycarbosilane precursor to SiC ceramics following an efficient room-temperature cross-linking process

被引:33
作者
Yu, Zhaoju [2 ]
Zhan, Junying [2 ]
Huang, Muhe [1 ,2 ]
Li, Ran [1 ,2 ]
Zhou, Cong [2 ]
He, Guomei [2 ]
Xia, Haiping [1 ,2 ]
机构
[1] Xiamen Univ, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Coll Mat, Key Lab High Performance Ceram Fibers, Minist Educ, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
LIQUID POLYCARBOSILANE; MECHANICAL-PROPERTIES; PYROLYTIC CONVERSION; SILICON-CARBIDE; COMPOSITES; MICROSTRUCTURE; DIVINYLBENZENE; FABRICATION; YIELD;
D O I
10.1007/s10853-010-4701-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Room-temperature cross-linking of a hyperbranched polycarbosilane (HBPCS) with divinylbenzene (DVB) in the presence of the cyclohexanone peroxide-cobaltous naphthenate (CHP-CN) initiator system was studied. According to the Fourier transform infrared spectroscopy (FT-IR) and (1)H nuclear magnetic resonance ((1)H NMR) results, the cross-linking reaction occurred via the vinyl polymerization. The GPC analysis confirmed the molecular weight of the cross-linked HBPCS significantly increased. Thermal behaviors of cross-linked HBPCS and original HBPCS were investigated by thermal gravimetric analysis-differential thermal analysis (TGA-DTA). The TGA results indicated that the ceramic yield of HBPCS remarkably increased by the cross-linking treatment. For the HBPCS/10 wt% DVB system, the maximum of reaction degree of HBPCS was obtained, which might be responsible for the highest ceramic yield of 70.1 wt% at 1000 A degrees C. However, the ceramic yield of the non-crosslinked HBPCS was only 45 wt% at 1000 A degrees C. The evolution of crystal structure of SiC as a function of pyrolysis temperature was traced by means of X-ray diffraction (XRD) and FT-IR. With the pyrolysis temperature increasing, the beta-SiC peaks became sharper and the grain size also grew larger. As the DVB content increased, the intensity of beta-SiC peaks significantly reduced, indicating smaller beta-SiC grain size.
引用
收藏
页码:6151 / 6158
页数:8
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