Reliability and effectiveness of LiNbO3 ferroelectric films sputtered on ITO-based conductive electrode

被引：12

作者：

Bornand, V ^{[1
]}

Papet, P ^{[1
]}

机构：

[1] CNRS, UMR 5617, Lab Physicochim Mat Condensee, F-34095 Montpellier, France

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2005年 / 92卷 / 2-3期

关键词：

LiNbO3; ITO; bilayered materials; radio-frequency sputtering; ferroelectric thin films;

D O I：

10.1016/j.matchemphys.2005.01.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bilayered LiNbO3 (LN) thin films were successfully deposited onto In2O3:SnO2 (ITO)-coated Si substrates by radio-frequency sputtering. The crystalline perfection and crystallographic orientation could be significantly improved by LiNbO3 template surface. This paper reviews the structural, morphological, compositional and ferroelectric properties of such as-grown heterostructures underlying key issues concerning the strategy used to improve the crystal quality and control the layer polarity. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：424 / 430

页数：7

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