3.48 ps ECL ring oscillator using over-300 GHz fT/fmax InP DHBTs

被引：5

作者：

Ida, A ^{[1
]}

Kurishima, K ^{[1
]}

Ishii, K ^{[1
]}

Watanabe, N ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 16期

关键词：

D O I：

10.1049/el:20030782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ECL gate delay of 3.48 ps/stage in a 19-stage conventional ring oscillator fabricated in an over-300 GHz f(T)/f(max) InP DHBT technology has been demonstrated. This is the first report (to the authors' knowledge) of sub-4 ps ECL gate delay. Large collector current density contributes to the very short gate delay.

引用

页码：1215 / 1217

页数：3

共 7 条

[1] Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base [J].

Ida, M ;

Kurishima, K ;

Watanabe, N .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) :694-696

[2]

IDA M, 1999, I PHYS C SER, V166, P293

[3] A 4.2-ps ECL ring-oscillator in a 285-GHz fMAX SiGe technology [J].

Jagannathan, B ;

Meghelli, M ;

Rylyakov, AV ;

Groves, RA ;

Chinthakindi, AK ;

Schnabel, CM ;

Ahlgren, DA ;

Freeman, GG ;

Stein, KJ ;

Subbanna, S .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :541-543

[4] FABRICATION AND CHARACTERIZATION OF HIGH-PERFORMANCE INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KURISHIMA, K ;

NAKAJIMA, H ;

KOBAYASHI, T ;

MATSUOKA, Y ;

ISHIBASHI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1319-1326

[5] EFFECTS OF A COMPOSITIONALLY-GRADED INXGA1-XAS BASE IN ABRUPT-EMITTER INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KURISHIMA, K ;

NAKAJIMA, H ;

YAMAHATA, S ;

KOBAYASHI, T ;

MATSUOKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B) :1221-1227

[6]

Srivastava N, 2002, TG IEEE GAL ARS, P171, DOI 10.1109/GAAS.2002.1049054

[7]

Umeda Y, 1999, IEEE MTT S INT MICR, P205, DOI 10.1109/MWSYM.1999.779458

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