Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)

被引：5

作者：

Xin, Ying ^{[1
]}

Zhao, Xiaofeng ^{[2
]}

Jiang, Xiankai ^{[1
]}

Yang, Qun ^{[1
]}

Huang, Jiahe ^{[1
]}

Wang, Shuhong ^{[1
]}

Zheng, Rongrong ^{[1
]}

Wang, Cheng ^{[1
,3
]}

Hou, Yanjun ^{[1
]}

机构：

[1] Heilongjiang Univ, Sch Chem Engn & Mat, Harbin 150080, Heilongjiang, Peoples R China

[2] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Heilongjiang, Peoples R China

[3] Heilongjiang Univ, Key Lab Funct Inorgan Mat Chem, Minist Educ, Harbin 150080, Heilongjiang, Peoples R China

来源：

RSC ADVANCES | 2018年 / 8卷 / 13期

基金：

美国国家科学基金会; 黑龙江省自然科学基金;

关键词：

GRAPHENE-OXIDE LAYERS; CARBON NANOTUBES; HIGH-PERFORMANCE; DEVICES; COMPOSITE; ACCEPTOR; DONOR; NANOSHEETS; FILMS;

D O I：

10.1039/c8ra00029h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized under a Suzuki coupling reaction, and its structure was proved by Fourier transforminfrared (FT-IR) spectroscopy, and hydrogen and carbon nuclear magnetic resonance (H-1-NMR and C-13-NMR). A nonvolatile organic memristor, based on active layers of PFO and PFO: GO composite, was prepared by spin-coating and the influence of GO concentration on the electrical characteristics of the memristor was investigated. The results showed that the device had two kinds of conductance behavior: electric bistable nonvolatile flash memory behavior and conductor behavior. With an increase in GO concentration, the device has an increased ON/OFF current ratio, increasing from 2.1 x 10(1) to 1.9 x 10(3), a lower threshold voltage (V-SET), decreasing from -1.1 V to -0.7 V, and better stability. The current remained stable for 3 hours in both the ON state and OFF state, and the ON and OFF state current of the device did not change substantially after 9000 read cycles.

引用

页码：6878 / 6886

页数：9