Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)

Poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized under a Suzuki coupling reaction, and its structure was proved by Fourier transforminfrared (FT-IR) spectroscopy, and hydrogen and carbon nuclear magnetic resonance (H-1-NMR and C-13-NMR). A nonvolatile organic memristor, based on active layers of PFO and PFO: GO composite, was prepared by spin-coating and the influence of GO concentration on the electrical characteristics of the memristor was investigated. The results showed that the device had two kinds of conductance behavior: electric bistable nonvolatile flash memory behavior and conductor behavior. With an increase in GO concentration, the device has an increased ON/OFF current ratio, increasing from 2.1 x 10(1) to 1.9 x 10(3), a lower threshold voltage (V-SET), decreasing from -1.1 V to -0.7 V, and better stability. The current remained stable for 3 hours in both the ON state and OFF state, and the ON and OFF state current of the device did not change substantially after 9000 read cycles.