Direct Correlation between Low-Frequency Noise Measurements and Electromigration Lifetimes

被引：0
|
作者：
Beyne, Sofie [1 ,2 ]
Croes, Kristof [2 ]
De Wolf, Ingrid [1 ,2 ]
Tokei, Zsolt [2 ]
机构：
[1] Katholieke Univ Leuven, MTM, Kasteelpk Arenberg 44 Bus 2450, B-3001 Leuven, Belgium
[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年
关键词：
Electromigration; Interconnections; Low-Frequency Noise; Microelectronics Reliability; 1/f Noise; lifetime prediction; void nucleation; void growth; TEMPERATURE; NUCLEATION; FAILURE; GROWTH; METALS; MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that the use of low-frequency (LF) noise measurements as a new, faster technique for electromigration (EM) characterization is not limited to providing EM activation energies (which was previously demonstrated) but can also explain and even predict EM lifetimes of interconnect lines. Two models are proposed: one is to predict EM void nucleation and one to predict void growth times. Predictions can be made for individual interconnects based on the results of non-destructive LF noise measurements, prior to actual EM stress, which is not possible with any other EM test method presently available.
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页数：8
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